GaN/SiC RF Power Modules

GaN/SiC RF Power Modules Help Simplify Radar Amplifier Design

Differentiating these integrated standard modules from custom or build-to-print, PCB amplifier assemblies, or “pallets”, our new, ultra-efficient RF Power Modules are being developed to offer you a new level of integration. Built-in functions can include RF matching, gate-pulsing and sequencing (GPS), output noise suppression, temperature compensation, and VSWR protection. The result is a powerful, yet simple, higher-level building block for creating size, weight, power, power, and cost (SWaP-C) optimized high power amplifiers (HPAs) in pulsed and CW radar systems.

Integra’s RF Power Modules are available in a variety of RF bands, and future standard and semi-custom solutions will be built around a commitment to push our advanced gallium nitride on silicon carbide (GaN-on-SiC) 50-ohm RF Power Transistor technology up to X-band territories. Standard RF Power Modules currently offer output power up to 2400 W, and efficiencies up to 70%. Unique footprints and packaging approaches are available.

Learn more about these advanced, integrated RF Power Module solutions.


We will be happy to assist you in your design requirements and choice of INTEGRA products!
Additional information on our wide product range, product availability and prices will be supplied upon request.

Please contact us: Yusuf Kalayci or phone +49 (861) 16677-99